HT Semiconductor bc818 free download

File name bc818.pdf

BC881 TRANSISTOR (NPN) BC818-16 SOT-23 BC818-25 BC818-40 1. BASE 2. EMITTER FEATURES 3. COLLECTOR For general AF applications High collector current High current gain Low collector-emitter saturation voltage MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage VCBO IC= 10A, IE=0 30 V Collector-emitter breakdown voltage VCEO IC= 10mA, IB=0 25 V Emitter-base breakdown voltage VEBO IE= 10A, IC=0 5 V Collector cut-off current ICBO VCB= 25 V , IE=0 0.1 A Emitter cut-off current IEBO VEB= 4V, IC=0 0.1 A hFE(1) VCE= 1V, IC= 100mA 100 630 DC current gain hFE(2) VCE= 1V, IC= 300mA 60 Collector-emitter saturation voltage VCE(sat) IC= 500mA, IB= 50mA 0.7 V Base-emitter saturation voltage VBE(sat) IC= 500mA, IB= 50mA 1.2 V Base-emitter voltage